State-monitoring memory element
US8705309B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2013 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Jun 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/17764
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention relate to a state-monitoring memory element. The state-monitoring memory element may have a reduced ability to retain a logic state than other regular memory elements on an IC. Thus, if the state-monitoring memory elements fails or loses state during testing, it may be a good indicator that the IC's state retention may be in jeopardy, possibly requiring the IC to be reset. The state-monitoring memory element may be implemented by degrading an input voltage supply to the state-monitoring memory element across a diode and/or a transistor. One or more current sources may be used to stress the state-monitoring memory element. A logic analyzer may be used to analyze the integrity of the state-monitoring memory element and trigger appropriate actions in the IC, e.g., reset, halt, remove power, interrupt, responsive to detecting a failure in the state-monitoring memory element. Multiple state-monitoring memory elements may be distributed in different locations on the IC for better coverage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.