Patent · US Active

Distributed feedback laser having enhanced etch stop features

US8705582B2 · kind B2 · utility

0Cited by

2References

5Claims

0Family size

Assignee

FINISAR CORPORATION · US

Inventors

Ashish Verma · New Delhi, IN
Tsurugi Sudo · Pasadena, US
Sumesh Mani K. Thiyagarajan · Fremont, US
David Bruce Young · Taipei, TW

Key dates

Filing date	Jul 1, 2013
Grant date	Apr 22, 2014
Priority date	—
Expiry date	Jul 1, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/34306
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In one example embodiment, a DFB laser includes a substrate; an active region positioned above the substrate; a grating layer positioned above the active region, the grating layer including a portion that serves as a primary etch stop layer; a secondary etch stop layer positioned above the grating layer; and a spacer layer interposed between the grating layer and the secondary etch stop layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.