Semiconductor laser
US8705583B2 · kind B2 · utility
3Cited by
2References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 5, 2010 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Jun 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes an active region including an active layer, and a diffraction grating and a phase shift which determine an oscillation wavelength, and a distributed reflector region including a light guide layer and a refection diffraction grating. The distributed reflector region has an effective diffraction grating period which varies along a direction of a cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.