DBR laser diode with symmetric aperiodically shifted grating phase
US8705584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2011 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Oct 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1246
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In accordance with one embodiment of the present disclosure, a DBR laser diode is provided where the wavelength selective grating of the laser diode is characterized by an aperiodically shifted grating phase φ and a Bragg wavelength λB. The aperiodically shifted grating phase φ is substantially symmetric or substantially π-shifted symmetric relative to a midpoint CL or shifted midpoint CL* of the DBR section. The phase φ of the wavelength selective grating is characterized by aperiodic phase jumps of magnitude φJ1, J2, . . . and segment lengths l0, 1, . . . . The phase jumps of the wavelength selective grating are arranged substantially symmetrically about a midpoint CL or shifted midpoint CL* of the DBR section along the optical axis of the DBR laser diode. At least two phase jumps reside on each side of the midpoint CL or shifted midpoint CL* of the DBR section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.