Patent · US Active

Methods for forming patterned structures

US8709703B2 · kind B2 · utility

8Cited by
8References
32Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 21, 2008
Grant dateApr 29, 2014
Priority date
Expiry dateJan 4, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B5/1857
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In general, in a first aspect, the invention features a method that includes forming a first layer comprising a first material over a surface of a second layer, wherein forming the first layer includes sequentially forming a plurality of monolayers of the second material over the surface of the second layer, the second layer comprises a plurality of rows of a second material extending along a first direction and spaced from one another in a second direction orthogonal to the first direction, and the first layer conforms to the surface of the second layer. The method further includes removing portions of the first layer to produce a plurality of rows of the first material extending along the first direction and spaced from one another in the second direction and removing portions of a third layer comprising a third material, where the portions correspond to intervals between the second plurality of rows so that removing the portions forms a plurality of rows of the third material extending along the first direction and spaced apart from one another. The first and second materials are different.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.