Intrinsic absorber layer for photovoltaic cells
US8709857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2010 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Nov 11, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
So as to manufacture an intrinsic absorber layer of amorphous hydrogenated silicon within a p-i-n configuration a solar cell by PeCvD deposition upon a base structure, thereby improving throughput an simultaneously maintaining quality of the absorber layer, a specific processing regime is proposed, wherein in the reactor for depositing the addressed absorber layer a pressure of between 1 mbar and 1.8 mbar is established and a flow of silane and of hydrogen with a dilution of silane to hydrogen of 1:4 up to 1:10 and generating an RF plasma with a generator power of between 600 W and 1200 W per 1.4 m2 base structure surface to be coated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.