Method for manufacturing photoelectric conversion device
US8709860B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2011 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Apr 12, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.