Semiconductor device
US8709922B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Apr 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6756
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.