Compositions and processes for forming photovoltaic devices
US8710355B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 13, 2009 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Feb 15, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having p-type silicon base and an n-type silicon layer is provided with a silicon nitride layer, an exchange metal in contact with the silicon nitride layer, and a non-exchange metal in contact with the exchange metal. This assembly is fired to form a metal silicide contact on the silicon substrate, and a conductive metal electrode in contact with the metal silicide contact. The exchange metal is from nickel, cobalt, iron, manganese, molybdenum, and combinations thereof, and the non-exchange metal is from silver, copper, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, gold, cadmium, beryllium, and combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.