High dynamic range pixel structure
US8710419B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 31, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Oct 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8033
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel structure comprises a photo-sensitive element PPD for generating charges in response to light and a charge conversion element FD. A first transfer gate TX is connected between the photo-sensitive element PPD and the charge conversion element. A charge storage element PG is connected to the photo-sensitive element PPD. The charge storage element PG has a higher charge storage density than the photo-sensitive element PPD. The charge storage element PG is located on the photo-sensitive element PPD side of the first transfer gate TX and is arranged to collect charges generated by the photo-sensitive element PPD during an integration period. The charge storage element can be a photo gate, photodiode or capacitor. Arrangements are provided with, and without, a potential barrier between the photo-sensitive element PPD and the charge storage element PG.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.