Optoelectronic semiconductor chip comprising a reflective layer

US8710512B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Tony Albrecht · Bad Abbach, DE
• Andreas Weimar · Regensburg, DE
• Anna Kasprzak-Zablocka · Donaustauf, DE
• Christian Eichinger · Wenzenbach, DE
• Kerstin Neveling · Pentling, DE

Key dates

• Filing date: Apr 24, 2009
• Grant date: Apr 29, 2014
• Expiry date: Apr 24, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

An optoelectronic semiconductor chip, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.