Patent · US Active

Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip

US8710537B2 · kind B2 · utility

8Cited by
3References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 25, 2009
Grant dateApr 29, 2014
Priority date
Expiry dateJul 15, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002

Abstract

A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.