Pixel structure of a solid-state image sensor employing a charge sorting method
US8710561B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 11, 2009 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Dec 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/151
Abstract
A pixel structure of a solid-state image sensor in which residual electrons in a photodiode is reduced and which has a first-stage gate that is arranged adjacent to the photodiode and controls read-out of electrons generated in the photodiode, a second-stage gate that is adjacent to the first-stage gate on the rear stage of the gate at a predetermined gap and controls movement of electrons read out by the readout control of the first-stage gate to the plurality of the charge-storage sections, and a plurality of third-stage gates that are adjacent to the second-stage gate on the rear stage of the gate at a predetermined gap, severally arranged corresponding to the plurality of the charge-storage sections, and perform control of distributing the electrons moved by the movement control of the second-stage gate severally to the plurality of the charge-storage sections, and gradient on which electrons are moved in the first-stage gate direction is formed on the potential of the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.