Semiconductor device and method of manufacturing the same
US8710580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Nov 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes first to n-th semiconductor layers (n is a natural number equal to or more than 2) being stacked in order from a surface of an insulating layer in a first direction perpendicular to the surface of the insulating layer, the first to n-th semiconductor layers extending in a second direction parallel to the surface of the insulating layer, the first to n-th semiconductor layers being insulated from each other, a common electrode connected to the first to n-th semiconductor layers in a first end of the second direction thereof, and a layer select transistor which uses the first to n-th semiconductor layers as channels and which selects one of the first to n-th semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.