Semiconductor device having trapezoidal shaped trenches
US8710626B2 · kind B2 · utility
1Cited by
1References
2Claims
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Key dates
| Filing date | Jul 18, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Jul 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/047
Abstract
Provided is a semiconductor capacitor including: a capacitor device forming region having a trapezoidal trench which is formed on a surface of a first conductivity type semiconductor substrate; a second conductivity type lower electrode layer provided along the trapezoidal trenches of the capacitor device forming region; a capacitor insulating film formed at least on a surface of the second conductivity type lower electrode layer; and a second conductivity type upper electrode formed on a surface of the capacitor insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.