Patent · US Active

Precursors and uses for CIS and CIGS photovoltaics

US8715775B2 · kind B2 · utility

0Cited by
49References
22Claims
0Family size

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Key dates

Filing dateSep 29, 2012
Grant dateMay 6, 2014
Priority date
Expiry dateSep 29, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldOrganic fine chemistry
  • WIPO sectorChemistry

Abstract

Processes for making a photovoltaic layer on a substrate by depositing a first layer of an ink onto the substrate, wherein the ink contains one or more compounds having the formula MB(ER)3, wherein MB is In, Ga, or Al, E is S or Se, and depositing a second layer of one or more copper chalcogenides or a CIGS material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.