Precursors and uses for CIS and CIGS photovoltaics
US8715775B2 · kind B2 · utility
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49References
22Claims
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Key dates
| Filing date | Sep 29, 2012 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Sep 29, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Processes for making a photovoltaic layer on a substrate by depositing a first layer of an ink onto the substrate, wherein the ink contains one or more compounds having the formula MB(ER)3, wherein MB is In, Ga, or Al, E is S or Se, and depositing a second layer of one or more copper chalcogenides or a CIGS material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.