Patent · US Active

Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head

US8715823B2 · kind B2 · utility

3Cited by
15References
5Claims
0Family size

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Key dates

Filing dateJun 15, 2012
Grant dateMay 6, 2014
Priority date
Expiry dateJun 15, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/265
  • WIPO fieldTextile and paper machines
  • WIPO sectorMechanical engineering

Abstract

There are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0≦x<1, 0.05≦y≦1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.