Semiconductor template substrate, light-emitting device using a semiconductor template substrate, and manufacturing method therefor
US8716042B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Mar 31, 2011 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Mar 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting device includes a semiconductor layer, a light-emitting stack structure formed on a first surface of the semiconductor layer, and a plurality of inverted pyramid structures formed on a second surface of the semiconductor layer opposite to the first surface. Each of the inverted pyramid structures has a sectional area increasing as each of the inverted pyramid structures is more extended in a vertical direction from the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.