Light emitting device and method for manufacturing the same
US8716046B2 · kind B2 · utility
2Cited by
5References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 4, 2009 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Aug 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.