Method for crystallizing amorphous silicon thin film and method for fabricating poly crystalline thin film transistor using the same
US8716112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2012 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Oct 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method. The amorphous silicon thin film transistor crystallizing method includes the steps of: forming an amorphous silicon layer on a substrate; forming an active region by patterning the amorphous silicon layer; forming a crystallization induced metal layer in both a source region and a drain region that are placed on both side ends of the active region; forming a number of dot-shaped metal silicide seeds on the surfaces of the source region and the drain region made of amorphous silicon by removing the crystallization induced metal layer; and crystallizing the active region formed of the amorphous silicon layer by heat-treating the substrate by using the metal silicide seeds as crystallization seeds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.