Electrode configurations for semiconductor devices
US8716141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2011 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Mar 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III-N semiconductor device can include an electrode-defining layer having a thickness on a surface of a III-N material structure. The electrode-defining layer has a recess with a sidewall, the sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a first width, and a portion of the recess proximal to the III-N material structure has a second width, the first width being larger than the second width. An electrode is in the recess, the electrode including an extending portion over the sidewall of the recess. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The sidewall forms an effective angle of about 40 degrees or less relative to the surface of the III-N material structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.