Electronic device incorporating memristor made from metallic nanowire
US8716688B2 · kind B2 · utility
3Cited by
20References
20Claims
0Family size
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Key dates
| Filing date | Feb 25, 2011 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Aug 21, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device includes a first electrode, a second electrode and a nanowire connected between the first and second electrodes to allow electric current flow. The nanowire is made from a conductive material exhibiting a variable resistance due to electromigration. The nanowire is repeatably switchable between two states. A voltage clamp operates through feedback control to maintain the voltage across the nanowire and prevent thermal runaway.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.