Thin film transistor substrate
US8716715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2013 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Jan 7, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor substrate including a thin film transistor having a drain electrode with an electrode portion, which overlaps with a semiconductor layer, and an extended portion, which extends from the electrode portion and has a portion overlapping with a storage electrode or storage electrode line. A passivation layer is arranged on the drain electrode, and it has a contact hole that partially exposes the extended portion of the drain electrode without exposing a step in the extended portion caused by the storage electrode or storage electrode line. A pixel electrode is arranged on the passivation layer and is electrically connected with the extended portion of the drain electrode through the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.