Monolithic HBT with wide-tuning range varactor
US8716757B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2012 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Oct 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
Abstract
A semiconductor device having a tunable capacitance is disclosed, comprising a substrate, a semiconductor base layer comprising a first semiconductor material having a first band-gap, and a plurality of successive semiconductor layers positioned between the substrate and the semiconductor base layer. The plurality of successive semiconductor layers includes a tuning layer comprising a second semiconductor material having a second band-gap larger than the first band-gap. Furthermore, the tuning layer has a non-uniform doping profile with doping concentration that varies in accordance with distance from a surface of the tuning layer proximal to the semiconductor base layer. The tunable capacitance of the semiconductor device varies in accordance with an applied voltage between the base layer and one of the successive semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.