Power semiconductor device
US8716789B2 · kind B2 · utility
13Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2012 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Sep 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.