Apparatus and method for crystallization of silicon
US8721789B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for crystallization of silicon includes a crucible for containing silicon, a heating and heat dissipating arrangement provided for melting the silicon contained in the crucible and for subsequently solidifying the molten silicon, and an electromagnetic stirring device provided for stirring the molten silicon in the crucible during the solidification of the molten silicon. A control arrangement is provided for controlling the heating and heat dissipating arrangement to solidify the molten silicon at a specified solidification rate and for controlling the electromagnetic stirring device to stir the molten silicon in response to the specified solidification rate of the molten silicon such that the ratio of a speed of the molten silicon and the specified solidification rate is above a first threshold value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.