Method for forming minute pattern and method for forming minute pattern mask
US8721905B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 27, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Aug 10, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming a minute pattern mask includes forming an etching target layer on a substrate. A convex pattern including a plurality of convex parts is formed on the etching target layer. A resin composition is coated on the convex pattern to form a resin layer including a first region neighboring the convex part and a second region positioned between the neighboring convex parts. The resin layer is ashed or etched to form the plurality of first resin patterns. The plurality of first resin patterns is processed to form a minute pattern mask including a plurality of second resin patterns. The etching target layer is etched using the plurality of second resin patterns as an etch mask to form a minute pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.