Method for fabricating photo detector
US8722448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2013 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Oct 30, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2360/144
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A photo detector and related fabricating method are disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer. The patterned conductive layer is disposed on the dielectric layer. The inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region. The first electrodes are electrically connected to the first patterned semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.