Semiconductor device and a method for manufacturing a semiconductor device
US8722532B2 · kind B2 · utility
1Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Aug 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first wiring is disposed over a semiconductor substrate. A first via is disposed over the first wiring. Further, the bottom surface of the first via is in contact with the first wiring. A first insulation layer is disposed over the semiconductor substrate, and is in contact with at least the top surface of the first wiring and the side surface of the first via. At least a part of each side surface of the first wiring and the first via cuts off each metal crystal grain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.