Method for forming contact window
US8722538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Sep 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a contact window includes: a step of providing a substrate; a step of forming a patterned amorphous carbon layer or spin-on coating layer, in which a surface of the substrate is exposed at two sides of the amorphous carbon layer or spin-on coating layer; a step of forming an interlayer dielectric layer on the substrate; a step of removing a portion of the interlayer dielectric layer until the patterned amorphous carbon layer or spin-on coating layer is exposed; a step of removing the patterned amorphous carbon layer or spin-on coating layer to form an opening; and a step of filling the opening with a conductive material to form the contact window.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.