Waveguide end-coupled infrared detector
US8723125B1 · kind B1 · utility
1Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Nov 6, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Nov 6, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/12004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A Ge waveguide photo-detector fabricated on a silicon-on-insulator substrate is provided. It comprises a Ge waveguide detector end-coupled to a light-signal-carrying silicon waveguide, both disposed on a silicon-on-insulator (SOI) substrate. An electrical field is established along the direction of light propagation inside the Ge waveguide detector by doping the two opposite ends of the Ge detector with P or N type dopants. In result the height and width of the Si waveguide is decoupled from the speed of the Ge detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.