Variable resistance memory
US8723152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Mar 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
Abstract
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring intersecting with the first wiring; a first electrode provided in an intersection region between the first wiring and the second wiring, the first electrode being connected to the first wiring; a second electrode connected to the second wiring, the second electrode facing to the first electrode; a variable resistance layer provided between the first electrode and the second electrode; and one of a first insulating layer and a first semiconductor layer formed at side portions of the second electrode. The one of the first insulating layer and the first semiconductor layer, and the second electrode form voids at the side portions of the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.