Semiconductor device, power circuit, and manufacturing method of semiconductor device
US8723173B2 · kind B2 · utility
19Cited by
27References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2010 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Apr 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.