Semiconductor light emitting device with contact hole passing through active layer
US8723206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2011 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Feb 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
Abstract
A semiconductor light emitting device has a semiconductor laminate including first and second conductivity type semiconductor layers respectively providing first and second main surfaces and an active layer. The semiconductor laminate is divided into first and second regions. At least one contact hole is formed to pass through the active layer from the second main surface of the first region. A first electrode is formed on the second main surface to be connected to the first conductivity type semiconductor layer of the first region and the second conductivity type semiconductor layer of the second region. A second electrode is formed on the second main surface of the first region to be connected to the second conductivity type semiconductor layer of the first region and the first conductivity type semiconductor layer of the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.