Semiconductor device having a diode forming area formed between a field-effect transistor forming area and a source electrode bus wiring or pad
US8723234B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2011 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Sep 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device of an embodiment includes: a semiconductor substrate; a field-effect transistor formed on the semiconductor substrate; and a diode forming area which is adjacent to a forming area of the field-effect transistor, wherein the diode forming area is insulated from the forming area of the transistor on the semiconductor substrate, and includes a first diode electrode in which a gate electrode of the field-effect transistor is placed in Schottky barrier junction and/or ohmic contact with the semiconductor substrate through a bus wiring or a pad; and a second diode electrode in which a source electrode of the field-effect transistor is placed in ohmic contact and/or Schottky barrier junction with the semiconductor substrate through a bus interconnection or a pad to form a diode between the gate electrode and the source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.