Back side illuminated CMOS image sensor with global shutter storage gates stacked on top of pinned photodiodes
US8723284B1 · kind B1 · utility
41Cited by
1References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 11, 2011 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Jan 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention describes a solid-state CMOS image sensor array and in particular describes in detail the image sensor array pixels, with global and rolling shutter capabilities, that utilize charge storage gates located on top of a pinned photodiode. The sensor array is illuminated from the back side and the location of the storage gate on top of the pinned photodiode saves valuable pixel area, which does not compromise the Dynamic Range of the image sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.