Patent · US Active

nvSRAM with inverted recall

US8724386B1 · kind B1 · utility

0Cited by
6References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 18, 2013
Grant dateMay 13, 2014
Priority date
Expiry dateJun 18, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C14/0081
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A RECALL process in a memory circuit includes RECALLing the state of a volatile memory cell from a nonvolatile memory cell, and inverting an output of the volatile memory cell after every other RECALL.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.