Bonded silicon structure for high density print head
US8727508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Nov 10, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2002/14241
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A print head including a jet stack can be formed using semiconductor device manufacturing techniques. A blanket metal layer, a blanket piezoelectric element layer, and a blanket conductive layer can be formed over a semiconductor substrate such as a semiconductor wafer or wafer section. The piezoelectric element layer and the blanket conductive layer can be patterned to provide a plurality of transducer piezoelectric elements and top electrodes respectively, while the metal layer forms a bottom electrode for the plurality of transducers. Subsequently, the semiconductor substrate can be patterned to form a body plate for the print head jet stack. Forming a print head jet stack using semiconductor device manufacturing techniques can provide a high resolution device with small feature sizes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.