Patent · US Active

Oxynitride sputtering target

US8728287B2 · kind B2 · utility

4Cited by

2References

1Claims

0Family size

Assignee

H.E.F. · FR

Inventors

Michel Martin · Val-de-Reuil, FR
Philippe Maurin-Perrier · Saint-Marcellin-en-Forez, FR
Olivier Blandenet · Meylan, FR

Key dates

Filing date	Mar 26, 2008
Grant date	May 20, 2014
Priority date	—
Expiry date	Dec 11, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A cathode sputtering target includes: between 30 and 40 atomic % of a metal, between 2 and 10 atomic % of nitrogen, and between 35 and 50 atomic % of oxygen. The remainder up to 100% is constituted by at least one element selected from the group that comprises phosphorous (P), boron (B), silicon (Si), germanium (Ge), gallium (Ga), sulphur (S) and aluminium (Al). Also provides a method of manufacturing a thin film from the target, and an electrochemical device comprising the thin film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.