Semiconductor device and a method of manufacturing the same
US8728834B2 · kind B2 · utility
1Cited by
1References
10Claims
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Key dates
| Filing date | Jul 2, 2012 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Sep 13, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
Abstract
A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.