Method for producing semiconductor chips using thin film technology

US8728937B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Andreas Ploessl · Regensburg, DE
• Stephan Kaiser · Regensburg, DE
• Volker Harle · Hemau, DE
• Berthold Hahn · Hemau, DE

Key dates

• Filing date: Jan 8, 2010
• Grant date: May 20, 2014
• Expiry date: May 22, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.