Patent · US Active

Quantum dot-fullerene junction optoelectronic devices

US8729528B2 · kind B2 · utility

18Cited by
19References
33Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 29, 2010
Grant dateMay 20, 2014
Priority date—
Expiry dateSep 29, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/549
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

An optoelectronic device includes a first electrode, a quantum dot layer disposed on the first electrode including a plurality of quantum dots, a fullerene layer disposed directly on the quantum dot layer wherein the quantum dot layer and the fullerene layer form an electronic heterojunction, and a second electrode disposed on the fullerene layer. The device may include an electron blocking layer. The quantum dot layer may be modified by a chemical treatment to exhibit increased charge carrier mobility.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.