Semiconductor device and method for manufacturing same
US8729562B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2010 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Jun 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
There are provided a high current semiconductor device that has low on-resistance, high mobility, and good pinch-off characteristics and in which a kink phenomenon is not easily caused even if a drain voltage is increased, and a method for producing the semiconductor device. The semiconductor device of the present invention includes a GaN-based layered body 15 having an opening 28, a regrown layer 27 including a channel, a gate electrode G, a source electrode S, and a drain electrode D. The regrown layer 27 includes an electron transit layer 22 and an electron supply layer 26. The GaN-based layered body includes a p-type GaN layer 6 whose end surface is covered by the regrown layer in the opening, and a p-side electrode 11 that is in ohmic contact with the p-type GaN layer is disposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.