Flexible ferroelectric memory device and manufacturing method for the same
US8729614B2 · kind B2 · utility
5Cited by
1References
8Claims
0Family size
Assignee
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Key dates
| Filing date | May 25, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Jun 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a flexible nonvolatile ferroelectric memory device, a 1T-1R (1Transistor-1Resistor) flexible ferroelectric memory device, and a manufacturing method for the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.