Semiconductor device and fabricating method of the same
US8729619B2 · kind B2 · utility
0Cited by
9References
6Claims
0Family size
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Key dates
| Filing date | Nov 11, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Mar 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of connecting holes by about 0.4 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.