Thermally stable magnetic tunnel junction cell and memory device including the same
US8729647B2 · kind B2 · utility
6Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Nov 20, 2012 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Nov 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thermally stable Magnetic Tunnel Junction (MTJ) cell, and a memory device including the same, include a pinned layer having a pinned magnetization direction, a separation layer on the pinned layer, and a free layer on the separation layer and having a variable magnetization direction. The pinned layer and the free layer include a magnetic material having Perpendicular Magnetic Anisotropy (PMA). The free layer may include a central part and a marginal part on a periphery of the central part. The free layer is shaped in the form of a protrusion in which the central part is thicker than the marginal part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.