Bipolar transistor and method for manufacturing the same
US8729669B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Dec 2, 2010 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Jul 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/051
Abstract
A method for manufacturing a bipolar transistor includes forming a first epitaxial layer on a semiconductor substrate, forming a second epitaxial layer on the first epitaxial layer, forming an oxide layer on the second epitaxial layer, etching the oxide layer to form an opening in which the second epitaxial layer is exposed, and forming a third epitaxial layer in the opening. The first and third epitaxial layers have a first-type conductivity, and the second epitaxial layer has a second-type conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.