Nonvolatile memory devices and methods of operating nonvolatile memory devices
US8730738B2 · kind B2 · utility
16Cited by
47References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | May 6, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.