Method for analysing photovoltaic layer systems using thermography
US8731852B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Sep 28, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for the evaluative analysis of a photovoltaic layer system is described. The method applies to a semiconductor layer forming a pn junction: an electric current is generated in the layer system; a spatially resolved thermal image of the surface of the layer system is generated; an intensity distribution of the thermal radiation relative to the respective number of pixels with the same intensity value is determined; an intensity mean/median from the intensity distribution is determined; an intensity interval based on a specifiable measure for a scattering of the intensity distribution is determined; a characteristic number is determined; and the characteristic number or a calculation value based thereon is compared with a specifiable reference characteristic number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.