Patent · US Active

Methods for fabricating MEMS structures by etching sacrificial features embedded in glass

US8735199B2 · kind B2 · utility

2Cited by
1References
20Claims
0Family size

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Key dates

Filing dateJan 24, 2013
Grant dateMay 27, 2014
Priority date
Expiry dateJan 24, 2033

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2201/0194
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

In an embodiment a method of fabricating a MEMS structure is provided. The method includes fabricating a working structure in a doped layer proximate a first surface of a silicon substrate. The first surface of the silicon substrate is bonded to a first planar glass structure having a first one or more sacrificial features embedded therein. The method also includes etching to remove a bulk of the silicon substrate, wherein the bulk is reverse of the first surface on the silicon substrate, wherein etching removes the bulk and leaves the working structure bonded to the first planar glass structure. The method also includes etching to remove the first one or more sacrificial features from the first planar glass structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.